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专利名称：Heat treatment apparatus and heat
treatment method
发明人：▲高▼木 聡,林 寛之,蔡 秀林申请号：JP2018076715申请日：20180412公开号：JP20191816A公开日：20191024
专利附图：
摘要：Problem to be solved: to provide a technology capable of promoting activationof the raw material gas inside the gas supply pipe. Solution: the heat treatmentapparatus 1 is a processing vessel 20 for accommodating a plurality of substrates
(wafers) w held in a shelf in a substrate holding device (wafer boat) WB, a gas supply pipe42 for supplying raw material gas from a lower position of a processing container to aprocessing vessel, and an exhaust part 6 for exhausting raw material gas in a processingvessel A heating portion 80 is disposed so as to cover the processing container and toheat a plurality of substrates.The gas supply pipe has a first straight pipe extendingupwardly along the longitudinal direction of the inner wall surface of the processingvessel, a bent portion bent upward downward from the first straight pipe portion, asecond straight pipe portion extending downwardly from the bent portion, and aplurality of gas discharge holes formed in the second straight pipe portion, and the firststraight pipe portion The cross-sectional area is larger than that of the second straighttube.Diagram
申请人：東京エレクトロン株式会社
地址：東京都港区赤坂五丁目３番１号
国籍：JP
代理人：伊東 忠重,伊東 忠彦
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