BTA316 series B and C
16 A Three-quadrant triacs high commutation
Rev. 01 — 11 April 2007
Product data sheet
1.Product profile
1.1General description
Passivated, new generation, high commutation triacs in a SOT78 plastic package
1.2Features
IVery high commutation performancemaximized at each gate sensitivity
IHigh immunity to dV/dt
1.3Applications
IHighpowermotorcontrol-e.g.washingIRefrigeration and air conditioningmachines and vacuum cleanerscompressorsINon-linear rectifier-fed motor loadsIElectronic thermostats
1.4Quick reference data
IVDRM≤600V (BTA316-600B/C)IVDRM≤800V (BTA316-800B/C)IITSM≤140A (t=20ms)
IIGT≤50mA (BTA316 series B)IIGT≤35mA (BTA316 series C)IIT(RMS)≤16A
2.Pinning information
Table 1.Pin123mb
Pinning
Descriptionmain terminal 1 (T1)main terminal 2 (T2)gate (G)
mounting base; main terminal 2 (T2)
mb
T2
sym051Simplified outlineSymbolT1G
123
SOT78 (TO-220AB)
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
3.Ordering information
Table 2.
Ordering information
PackageNameBTA316-600BBTA316-600CBTA316-800BBTA316-800C
SC-46Descriptionplastic single-ended package; heatsink mounted; 1 mounting hole; 3-leadTO-220AB
VersionSOT78Type number4.Limiting values
Table 3.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).SymbolVDRMIT(RMS)ITSM
Parameterrepetitive peak off-state voltageRMS on-state current
non-repetitive peak on-state currentConditionsBTA316-600B; BTA316-600CBTA316-800B; BTA316-800Cfull sine wave; Tmb≤101°C; seeFigure4 and5full sine wave; Tj=25°C prior tosurge; seeFigure2 and3t = 20 mst = 16.7 ms
I2tdIT/dtIGMPGMPG(AV)TstgTj
[1]
[1]Min---
Max60080016
UnitVVA
------
14015098100250.5+150125
AAA2sA/µsAWW°C°C
I2t for fusing
rate of rise of on-state currentpeak gate currentpeak gate poweraverage gate powerstorage temperaturejunction temperature
t = 10 ms
ITM=20A; IG=0.2A;dIG/dt=0.2A/µs
over any 20ms period-−40-
Althoughnotrecommended,off-statevoltagesupto800Vmaybeappliedwithoutdamage,butthetriacmayswitchtotheon-state.Therate of rise of current should not exceed 15A/µs.
BTA316_SER_B_C_1© NXP B.V. 2007. All rights reserved.
Product data sheetRev. 01 — 11 April 20072 of 12
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
20Ptot(W)15003aab6conductionangle, (degrees)306090120180formfactora42.82.21.91.57α = 180°120°90°α60°30°105002468101214IT(RMS) (A)16α=conduction angleFig 1.Total power dissipation as a function of RMS on-state current; maximum values160ITSM(A)120003aab66880ITITSMt1/fTj(init) = 25 °C max400 1 10 102number of cycles (n) 103f=50HzFig 2.Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvaluesBTA316_SER_B_C_1© NXP B.V. 2007. All rights reserved.
Product data sheetRev. 01 — 11 April 20073 of 12
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
103ITSM(A)003aab671(1) 102ITITSMttpTj(init) = 25 °C max 1010-510-410-310-2tp (s)10-1tp≤20ms(1)dIT/dt limitFig 3.Non-repetitive peak on-state current as a function of pulse duration; maximum values60003aab685IT(RMS)(A)5020IT(RMS)(A)16003aab684401230820410010-210-1 1 10surge duration (s)0-50050100150Tmb (°C)f=50Hz;Tmb=101°CFig 4.RMS on-state current as a function of surgeduration; maximum valuesFig 5.RMSon-statecurrentasafunctionofmountingbase temperature; maximum valuesBTA316_SER_B_C_1© NXP B.V. 2007. All rights reserved.
Product data sheetRev. 01 — 11 April 20074 of 12
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
5.Thermal characteristics
Table 4.SymbolRth(j-mb)Rth(j-a)
Thermal characteristicsParameterConditionsMin---Typ--60Max1.71.2-UnitK/WK/WK/Wthermalresistancefromjunctiontohalf cycle; seeFigure6mounting basefull cycle; seeFigure6thermalresistancefromjunctiontoin free airambient
10Zth(j-mb)(K/W)1003aab776(1)(2)10−1P10−2tpt10−310−510−410−310−210−11tp (s)10(1)Unidirectional (half cycle)(2)Bidirectional (full cycle)Fig 6.Transient thermal impedance from junction to mounting base as a function of pulse durationBTA316_SER_B_C_1© NXP B.V. 2007. All rights reserved.
Product data sheetRev. 01 — 11 April 20075 of 12
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
6.Static characteristics
Table 5.Static characteristicsTj=25°C unless otherwise specified.SymbolParameterConditionsBTA316-600BBTA316-800BMinIGT
gate triggercurrent
VD=12V; IT=0.1A; seeFigure8T2+ G+T2+ G−T2− G−
IL
latching currentVD=12V; IGT=0.1A; seeFigure10T2+ G+T2+ G−T2− G−
IHVTVGTID
holding currenton-statevoltagegate triggervoltage
VD=12V; IGT=0.1A; seeFigure11IT=18A; seeFigure9VD=12V; IT=0.1A; seeFigure7VD=400V; IT=0.1A; Tj=125°C------0.25-----1.30.80.40.1
609060601.51.5-0.5
------0.25-----1.30.80.40.1
506050351.51.5-0.5
mAmAmAmAVVVmA
222
---505050
222
---353535
mAmAmA
TypMaxBTA316-600CBTA316-800CMinTypMaxUnitoff-state currentVD=VDRM(max); Tj=125°C
BTA316_SER_B_C_1© NXP B.V. 2007. All rights reserved.
Product data sheetRev. 01 — 11 April 20076 of 12
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
7.Dynamic characteristics
Table 6.
Dynamic characteristics
ConditionsBTA316-600BBTA316-800BMindVD/dt
rate of rise ofoff-statevoltage
VDM=0.67× VDRM(max); Tj=125°C;exponential waveform; gate open circuit
1000
Typ--BTA316-600CBTA316-800CTyp-Max-V/µs
500
UnitSymbolParameterMaxMindIcom/dtrateofchangeVDM=400V; Tj=125°C; IT(RMS)=16A;
ofwithout snubber; gate open circuitcommutatingcurrenttgt
gate-controlledITM=20A; VD=VDRM(max); IG=0.1A;turn-on timedIG/dt=5A/µs
20--15--A/ms
-2--2-µs
1.6VGT VGT(25°C)1.2001aab1013(1)001aac669IGTIGT(25°C)2(2)(3)0.810.4−50050100Tj (°C)1500−50050100Tj (°C)150(1)T2− G−(2)T2+ G−(3)T2+ G+Fig 7.Normalizedgatetriggervoltageasafunctionofjunction temperatureFig 8.Normalizedgatetriggercurrentasafunctionofjunction temperatureBTA316_SER_B_C_1© NXP B.V. 2007. All rights reserved.
Product data sheetRev. 01 — 11 April 20077 of 12
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
50IT (A)40003aab6663ILIL(25°C)2001aab1003020(1)(2)(3)110000.511.5VT (V)20−50050100Tj (°C)150Vo=1.024VRs=0.021Ω(1)Tj = 125°C; typical values(2)Tj = 125°C; maximum values(3)Tj = 25°C; maximum valuesFig 9.On-state current as a function of on-statevoltage3IHIH(25°C)2Fig 10.Normalized latching current as a function ofjunction temperature001aab09910−50050100Tj (°C)150Fig 11.Normalized holding current as a function of junction temperatureBTA316_SER_B_C_1© NXP B.V. 2007. All rights reserved.
Product data sheetRev. 01 — 11 April 20078 of 12
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
8.Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EpAA1qD1mountingbaseDL1L2QLb1123bcee05scale10 mmDIMENSIONS (mm are the original dimensions)UNITmmA4.74.1A11.401.25b0.90.6b11.451.00c0.70.4D16.015.2D16.65.9E10.39.7e2.54L15.012.8L13.302.79L2max.3.0p3.83.5q3.02.7Q2.62.2OUTLINEVERSION SOT78 REFERENCES IEC JEDEC3-lead TO-220AB JEITASC-46EUROPEANPROJECTIONISSUE DATE05-03-2205-10-25Fig 12.Package outline SOT78 (3-lead TO-220AB)
BTA316_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheetRev. 01 — 11 April 20079 of 12
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NXP Semiconductors
BTA316 series B and C
16 A Three-quadrant triacs high commutation
9.Revision history
Table 7.
Revision history
Release date20070411
Data sheet statusProduct data sheet
Change notice-Supersedes-Document IDBTA316_SER_B_C_1
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BTA316 series B and C
16 A Three-quadrant triacs high commutation
10.Legal information
10.1Data sheet status
Document status[1][2]Objective [short] data sheetPreliminary [short] data sheetProduct [short] data sheet
[1][2][3]
Product status[3]DevelopmentQualificationProduction
DefinitionThis document contains data from the objective specification for product development.This document contains data from the preliminary specification.This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design.The term ‘short data sheet’ is explained in section “Definitions”.
Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatusinformation is available on the Internet at URLhttp://www.nxp.com.
10.2Definitions
Draft —The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness of
informationincludedhereinandshallhavenoliabilityfortheconsequencesofuse of such information.
Short data sheet —A short data sheet is an extract from a full data sheetwiththesameproducttypenumber(s)andtitle.Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfull information. For detailed and full information see the relevant full datasheet, which is available on request via the local NXP Semiconductors salesoffice. In case of any inconsistency or conflict with the short data sheet, thefull data sheet shall prevail.
malfunctionofaNXPSemiconductorsproductcanreasonablybeexpectedtoresult in personal injury, death or severe property or environmental damage.NXP Semiconductors accepts no liability for inclusion and/or use of NXPSemiconductors products in such equipment or applications and thereforesuch inclusion and/or use is at the customer’s own risk.
Applications —Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Limiting values —Stress above one or more limiting values (as defined intheAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanentdamagetothedevice.Limitingvaluesarestressratingsonlyandoperationofthe device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limitingvalues for extended periods may affect device reliability.
Terms and conditions of sale —NXP Semiconductors products are soldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.nxp.com/profile/terms, including those pertaining to warranty,intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case ofany inconsistency or conflict between information in this document and suchterms and conditions, the latter will prevail.
No offer to sell or license —Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsor other industrial or intellectual property rights.
10.3Disclaimers
Right to make changes —NXPSemiconductorsreservestherighttomakechanges to information published in this document, including without
limitation specifications and product descriptions, at any time and withoutnotice.Thisdocumentsupersedesandreplacesallinformationsuppliedpriorto the publication hereof.
General —Information in this document is believed to be accurate and
reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformation and shall have no liability for the consequences of use of suchinformation.
Suitability for use —NXP Semiconductors products are not designed,authorized or warranted to be suitable for use in medical, military, aircraft,space or life support equipment, nor in applications where failure or
10.4Trademarks
Notice:Allreferencedbrands,productnames,servicenamesandtrademarksare the property of their respective owners.
11.Contact information
For additional information, please visit:http://www.nxp.com
For sales office addresses, send an email to:salesaddresses@nxp.com
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12.Contents
1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 11.1General description. . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 13Ordering information. . . . . . . . . . . . . . . . . . . . . 24Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25Thermal characteristics. . . . . . . . . . . . . . . . . . . 56Static characteristics. . . . . . . . . . . . . . . . . . . . . 67Dynamic characteristics . . . . . . . . . . . . . . . . . . 78Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 99Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1010Legal information. . . . . . . . . . . . . . . . . . . . . . . 1110.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1110.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1110.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1110.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1111Contact information. . . . . . . . . . . . . . . . . . . . . 1112
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
BTA316 series B and C
16 A Three-quadrant triacs high commutation
Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)described herein, have been included in section ‘Legal information’.
© NXP B.V.2007.All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 April 2007
Document identifier: BTA316_SER_B_C_1
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