专利内容由知识产权出版社提供
专利名称：Memory cell with an asymmetric crystalline
structure
发明人：Sheng Teng Hsu,Tingkai Li,David R.
Evans,Wei-Wei Zhuang,Wei Pan
申请号：US11130983申请日：20050516公开号：US07214583B2公开日：20070508
专利附图：
摘要：Asymmetrically structured memory cells and a fabrication method are provided.The method comprises: forming a bottom electrode; forming an electrical pulse variousresistance (EPVR) first layer having a polycrystalline structure over the bottom electrode;forming an EPVR second layer adjacent the first layer, with a nano-crystalline or
amorphous structure; and, forming a top electrode overlying the first and second EPVRlayers. EPVR materials include CMR, high temperature super conductor (HTSC), orperovskite metal oxide materials. In one aspect, the EPVR first layer is deposited with ametalorganic spin coat (MOD) process at a temperature in the range between 550 and700 degrees C. The EPVR second layer is formed at a temperature less than, or equal to
the deposition temperature of the first layer. After a step of removing solvents, the MODdeposited EPVR second layer is formed at a temperature less than, or equal to the 550degrees C.
申请人：Sheng Teng Hsu,Tingkai Li,David R. Evans,Wei-Wei Zhuang,Wei Pan
地址：Camas WA US,Vancouver WA US,Beaverton OR US,Vancouver WA US,VancouverWA US
国籍：US,US,US,US,US
代理机构：Law Office of Gerald Maliszewski
代理人：Gerald Maliszewski
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